Attributes

Key Value
Base Product NumberDMG1029
CategoryDiscrete Semiconductor .
ConfigurationN and P-Channel Complem.
Current - Continuous Dr.500mA (Ta), 360mA (Ta)
Drain to Source Voltage.60V
FET FeatureStandard
Gate Charge (Qg) (Max) .0.3nC @ 4.5V, 0.28nC @ .
Input Capacitance (Ciss.30pF @ 25V, 25pF @ 25V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseSOT-563, SOT-666
Power - Max450mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs1.7Ohm @ 500mA, 10V, 4O.
Series-
Supplier Device PackageSOT-563
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250?A, 3V @ 250?A
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