Attributes

Key Value
Base Product NumberDMN2250
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.35A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .3.1 nC @ 10 V
Input Capacitance (Ciss.94 pF @ 16 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case3-UFDFN
Power Dissipation (Max)500mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs170mOhm @ 1A, 4.5V
Series-
Supplier Device PackageX1-DFN1006-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1V @ 250?A
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