mpn
IRF6609TRPBF
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
31A (Ta), 150A (Tc)
Drain to Source Voltage.
20 V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
69 nC @ 4.5 V
Input Capacitance (Ciss.
6290 pF @ 10 V
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Operating Temperature
-40?C ~ 150?C (TJ)
Package
Tape & Reel (TR)
Package / Case
DirectFET? Isometric MT
Part Status
Obsolete
Power Dissipation (Max)
1.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs
2mOhm @ 31A, 10V
Series
HEXFET?
Supplier Device Package
DIRECTFET? MT
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
2.45V @ 250?A