NXP USA Inc. PMN25EN,115

mpnPMN25EN,115
brandname: NXP USA Inc.
manufacturername: NXP USA Inc.

Attributes

Key	Value
Current - Continuous Dr.	6.2A (Ta)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	11 nC @ 10 V
Input Capacitance (Ciss.	492 pF @ 15 V
Mfr	NXP USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package / Case	SC-74, SOT-457
Part Status	Obsolete
Power Dissipation (Max)	540mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs	23mOhm @ 6.2A, 10V
Series	-
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 250?A

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