Attributes

Key Value
Base Product NumberSIR608
CategoryDiscrete Semiconductor .
Current - Continuous Dr.51A (Ta), 208A (Tc)
Drain to Source Voltage.45V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .167nC @ 10V
Input Capacitance (Ciss.8900pF @ 20V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8
Part StatusActive
Power Dissipation (Max)6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs1.2mOhm @ 20A, 10V
SeriesTrenchFET? Gen IV
Supplier Device PackagePowerPAK? SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+20V, -16V
Vgs(th) (Max) @ Id2.3V @ 250?A
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