DIODES DMN2600UFB-7

B076FCKX8Z

DIODES DMN2600UFB-7 Single N-Channel 25 V 600 mOhm 0.85 nC 0.54 W Silicon SMT Mosfet - UFDFN-3 - 3000 item(s)

DIODES DMN2600UFB-7 Single N-Channel 25 V 600 mOhm 0.85 nC 0.54 W Silicon SMT Mosfet - UFDFN-3 - 3000 item(s)zoom

Attributes

Key Value
Base Product NumberDMN2600
CaseX1-DFN1006-3
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.3A (Ta)
Drain current900mA
Drain to Source Voltage.25 V, 25V
Drain-source voltage25V
Drive Voltage (Max Rds .1.8V, 4.5V
Drive Voltage (Max Rds .1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate charge850pC
Gate Charge (Qg) (Max) .0.85nC @ 4.5V, 0.85 nC .
Gate-source voltage?8V
Input Capacitance (Ciss.70.13pF @ 15V, 70.13 pF.
Kind of channelenhanced
Kind of packagereel,
ManufacturerDiodes Incorporated
MfrDiodes Incorporated
MountingSMD
Mounting TypeSurface Mount
On-state resistance600m?
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case3-UFDFN
Part StatusActive
Polarisationunipolar
Power dissipation540mW
Power Dissipation (Max)540mW (Ta)
Product StatusActive
Pulsed drain current3A
Rds On (Max) @ Id, Vgs350mOhm @ 200mA, 4.5V
Series-
Supplier Device PackageX1-DFN1006-3, 3-X1DFN10.
TechnologyMOSFET (Metal Oxide)
Type of transistorN-MOSFET
Vgs (Max)?8V
Vgs(th) (Max) @ Id1V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
TMEDMN2600UFB-70.0534103000DIODES INCORPORATED0.0534 @ 3000
Future Electronics40477560.0592830003000Diodes Incorporated0.05928 @ 3000
thumbzoomNewark28AK85240.07753000DIODES INC.0.077 @ 3000
Digi-Key42499270.08806713000Diodes Incorporated0.088067 @ 3000
HotendaH18200370.1003616373Diodes Incorporated0.10036 @ 3000
Win SourceDMN2600UFB-70.123003000Diodes Incorporated0.12 @ 3000
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