Attributes

Key Value
Base Product NumberDMT10
CategoryDiscrete Semiconductor .
Current - Continuous Dr.98A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .71 nC @ 10 V
Input Capacitance (Ciss.3000 pF @ 50 V
MfrDiodes Incorporated
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)2W (Ta), 139W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs9.5mOhm @ 13A, 10V
Series-
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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