Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11.4A (Tc)
Drain to Source Voltage.250 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .53.5 nC @ 10 V
Input Capacitance (Ciss.1080 pF @ 25 V
MfrFairchild Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-3P-3 Full Pack
Power Dissipation (Max)73W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs270mOhm @ 5.7A, 10V
SeriesQFET?
Supplier Device PackageTO-3PF
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
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