Attributes

Key Value
Base Product NumberGD20
Capacitance @ Vr, F737pF @ 1V, 1MHz
CategoryDiscrete Semiconductor .
Current - Average Recti.39A (DC)
Current - Reverse Leaka.10 ?A @ 1200 V
Diode TypeSilicon Carbide Schottky
MfrGeneSiC Semiconductor
Mounting TypeThrough Hole
Operating Temperature -.-55?C ~ 175?C
PackageTube
Package / CaseTO-247-2
Product StatusActive
Reverse Recovery Time (.0 ns
SeriesSiC Schottky MPS?
SpeedNo Recovery Time > 500m.
Supplier Device PackageTO-247-2
Voltage - DC Reverse (V.1200 V
Voltage - Forward (Vf) .1.8 V @ 20 A
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