mpn
RFW2N06RLE
brand
name: Harris Corporation
manufacturer
name: Harris Corporation
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
2A (Tc)
Drain to Source Voltage.
60 V
Drive Voltage (Max Rds .
5V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
30 nC @ 10 V
Input Capacitance (Ciss.
535 pF @ 25 V
Mfr
Harris Corporation
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Bulk
Package / Case
4-DIP (0.300", 7.62mm)
Part Status
Active
Power Dissipation (Max)
1.09W (Tc)
Rds On (Max) @ Id, Vgs
200mOhm @ 2A, 5V
Series
-
Supplier Device Package
4-DIP, Hexdip
Technology
MOSFET (Metal Oxide)
Vgs (Max)
+10V, -5V
Vgs(th) (Max) @ Id
2V @ 250?A