Infineon Technologies IPB032N10N5ATMA1

mpnIPB032N10N5ATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPB032
Category	Discrete Semiconductor .
Current - Continuous Dr.	166A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	95 nC @ 10 V
Input Capacitance (Ciss.	6970 pF @ 50 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-8, D?Pak (7 Lead.
Part Status	Active
Power Dissipation (Max)	187W (Tc)
Rds On (Max) @ Id, Vgs	3.2mOhm @ 83A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.8V @ 125?A

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