Attributes

Key Value
Base Product NumberIPB60R
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6.1A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .27 nC @ 10 V
Input Capacitance (Ciss.550 pF @ 100 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)60W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs600mOhm @ 3.3A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO263-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 220?A
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