Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.67A (Tc)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .13 nC @ 4.5 V
Input Capacitance (Ciss.1220 pF @ 10 V
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusObsolete
Power Dissipation (Max)57W (Tc)
Rds On (Max) @ Id, Vgs7.9mOhm @ 21A, 10V
SeriesHEXFET?
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.55V @ 250?A
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