Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6.6A (Tc)
Drain to Source Voltage.100V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .27nC @ 10V
Input Capacitance (Ciss.350pF @ 25V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusObsolete
Power Dissipation (Max)40W (Tc)
Rds On (Max) @ Id, Vgs480mOhm @ 3.9A, 10V
SeriesHEXFET?
Supplier Device PackageD-Pak
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759681402.5524