Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.24A (Tc)
DescriptionMOSFET N-CH 200V 24A D2.
Detailed DescriptionN-Channel 200 V 24A (Tc.
Digi-Key Part NumberIRFS23N20D-ND
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .86 nC @ 10 V
Input Capacitance (Ciss.1960 pF @ 25 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IRFS23N20D
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)3.8W (Ta), 170W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs100mOhm @ 14A, 10V
SeriesHEXFET?
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5.5V @ 250?A
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