mpn
IXTA4N60P
brand
name: IXYS
manufacturer
name: IXYS
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
4A (Tc)
Drain to Source Voltage.
600 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
13 nC @ 10 V
Input Capacitance (Ciss.
635 pF @ 25 V
Mfr
IXYS
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Tube
Package / Case
TO-263-3, D?Pak (2 Lead.
Part Status
Obsolete
Power Dissipation (Max)
89W (Tc)
Rds On (Max) @ Id, Vgs
2Ohm @ 2A, 10V
Series
PolarHV?
Supplier Device Package
TO-263AA
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?30V
Vgs(th) (Max) @ Id
5.5V @ 100?A