Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.69A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .5 nC @ 5 V
MfrMicrosemi Corporation
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-205AF Metal Can
Power Dissipation (Max)8.33W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.4Ohm @ 1.07A, 5V
SeriesMilitary, MIL-PRF-19500.
Supplier Device PackageTO-205AF (TO-39)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?10V
Vgs(th) (Max) @ Id2V @ 1mA
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