Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9.6A (Ta), 58A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 11.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .13 nC @ 4.5 V
Input Capacitance (Ciss.1456 pF @ 12 V
MfrON Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, I.
Part StatusObsolete
Power Dissipation (Max)1.4W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
Series-
Supplier Device PackageI-PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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