Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.21A (Ta)
Drain to Source Voltage.40V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .14.4nC @ 10V
Input Capacitance (Ciss.715pF @ 20V
MfrON Semiconductor
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageBulk
Package / CaseTO-251-3 Short Leads, I.
Part StatusObsolete
Power Dissipation (Max)1W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs28mOhm @ 10.5A, 10V
Series-
Supplier Device PackageTP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id-
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