Attributes

Key Value
Base Product NumberNTBG160
CategoryDiscrete Semiconductor .
Current - Continuous Dr.19.5A (Tc)
Drain to Source Voltage.1200 V
Drive Voltage (Max Rds .20V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .33.8 nC @ 20 V
Input Capacitance (Ciss.678 pF @ 800 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-8, D?Pak (7 Lead.
Part StatusActive
Power Dissipation (Max)136W (Tc)
Rds On (Max) @ Id, Vgs224mOhm @ 12A, 20V
Series-
Supplier Device PackageD2PAK-7
TechnologySiC (Silicon Carbide Ju.
Vgs (Max)+25V, -15V
Vgs(th) (Max) @ Id4.3V @ 2.5mA
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