Attributes

Key Value
Base Product NumberRJ1G08
CategoryDiscrete Semiconductor .
Current - Continuous Dr.80A (Ta)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .31.1 nC @ 10 V
Input Capacitance (Ciss.2410 pF @ 20 V
MfrRohm Semiconductor
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)78W (Ta)
Rds On (Max) @ Id, Vgs5.6mOhm @ 80A, 10V
Series-
Supplier Device PackageLPTL
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 500?A
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