mpn
SSM3K7002KFU,LF
brand
name: Toshiba Semiconductor and Storage
manufacturer
name: Toshiba Semiconductor and Storage
Attributes
Key
Value
Base Product Number
TCR4S
Category
Discrete Semiconductor .
Current - Continuous Dr.
400mA (Ta)
Drain to Source Voltage.
60V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
0.6nC @ 4.5V
Input Capacitance (Ciss.
40pF @ 10V
Mfr
Toshiba Semiconductor a.
Mounting Type
Surface Mount
Operating Temperature
150?C
Package
Tape & Reel (TR)
Package / Case
SC-70, SOT-323
Part Status
Active
Power Dissipation (Max)
150mW (Ta)
Rds On (Max) @ Id, Vgs
1.5Ohm @ 100mA, 10V
Series
U-MOSVII-H
Supplier Device Package
USM
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
2.1V @ 250?A