Attributes

Key Value
Base Product NumberTCR4S
CategoryDiscrete Semiconductor .
Current - Continuous Dr.400mA (Ta)
Drain to Source Voltage.60V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .0.6nC @ 4.5V
Input Capacitance (Ciss.40pF @ 10V
MfrToshiba Semiconductor a.
Mounting TypeSurface Mount
Operating Temperature150?C
PackageTape & Reel (TR)
Package / CaseSC-70, SOT-323
Part StatusActive
Power Dissipation (Max)150mW (Ta)
Rds On (Max) @ Id, Vgs1.5Ohm @ 100mA, 10V
SeriesU-MOSVII-H
Supplier Device PackageUSM
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.1V @ 250?A
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