Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Ta), 35A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .39 nC @ 10 V
Input Capacitance (Ciss.2600 pF @ 15 V
MfrAlpha & Omega Semicondu.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case8-PowerVDFN
Power Dissipation (Max)3.1W (Ta), 29W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs14mOhm @ 9A, 10V
Series-
Supplier Device Package8-DFN-EP (3x3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id3V @ 250?A
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