Harris Corporation HUF76137S3S

mpnHUF76137S3S
brandname: Harris Corporation
manufacturername: Harris Corporation

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	75A (Tc)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	72 nC @ 10 V
Input Capacitance (Ciss.	2100 pF @ 25 V
Mfr	Harris Corporation
Mounting Type	Surface Mount
Operating Temperature	-40?C ~ 150?C (TJ)
Package	Bulk
Package / Case	TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)	145W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	9mOhm @ 75A, 10V
Series	-
Supplier Device Package	D2PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?16V
Vgs(th) (Max) @ Id	3V @ 250?A

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