Infineon Technologies BSZ011NE2LS5IATMA1

mpnBSZ011NE2LS5IATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	BSZ011
Category	Discrete Semiconductor .
Current - Continuous Dr.	35A (Ta), 40A (Tc)
Drain to Source Voltage.	25 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	50 nC @ 10 V
Input Capacitance (Ciss.	3400 pF @ 12 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.1W (Ta), 69W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	1.1mOhm @ 20A, 10V
Series	OptiMOS? 5
Supplier Device Package	PG-TSDSON-8-FL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?16V
Vgs(th) (Max) @ Id	2V @ 250?A

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