Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.400A (Tj)
Drain to Source Voltage.1200V (1.2kV)
FET FeatureSilicon Carbide (SiC)
Gate Charge (Qg) (Max) .1320nC @ 15V
Input Capacitance (Ciss.600V
MfrInfineon Technologies
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageTray
Package / CaseModule
Part StatusActive
Power - Max20mW
Rds On (Max) @ Id, Vgs3.7mOhm @ 400A, 15V
SeriesHybridPACK?
Supplier Device PackageAG-HYBRIDD-2
Vgs(th) (Max) @ Id5.55V @ 240mA
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