Infineon Technologies IPB60R230P6ATMA1

mpnIPB60R230P6ATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPB60R
Category	Discrete Semiconductor .
Current - Continuous Dr.	16.8A (Tc)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	31 nC @ 10 V
Input Capacitance (Ciss.	1450 pF @ 100 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-4, D?Pak (3 Lead.
Power Dissipation (Max)	126W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	230mOhm @ 6.4A, 10V
Series	CoolMOS? P6
Supplier Device Package	PG-TO263-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.5V @ 530?A

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