Attributes

Key Value
Base Product NumberIPDQ65
CategoryDiscrete Semiconductor .
Current - Continuous Dr.136A (Tc)
DescriptionHIGH POWER_NEW
Detailed DescriptionN-Channel 650 V 136A (T.
Digi-Key Part Number448-IPDQ65R017CFD7XTMA1.
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .236 nC @ 10 V
Input Capacitance (Ciss.12338 pF @ 400 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPDQ65R017CFD7XTMA1
Manufacturer Standard L.39 Weeks
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case22-PowerBSOP Module
Power Dissipation (Max)694W (Tc)
Product StatusActive
SeriesCoolMOS?
Supplier Device PackagePG-HDSOP-22-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 3.08mA
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