Infineon Technologies IRFP4468PBFXKMA1

mpnIRFP4468PBFXKMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	290A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	540 nC @ 10 V
Input Capacitance (Ciss.	19860 pF @ 50 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	520W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	2.6mOhm @ 180A, 10V
Series	HEXFET?
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A

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