Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2.5A (Tc)
Drain to Source Voltage.500 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .33 nC @ 10 V
MfrMicrosemi Corporation
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-205AF Metal Can
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.6Ohm @ 2.5A, 10V
SeriesMilitary, MIL-PRF-19500.
Supplier Device PackageTO-205AF (TO-39)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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