NXP USA Inc. PMR780SN115

mpnPMR780SN115
brandname: NXP USA Inc.
manufacturername: NXP USA Inc.

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	550mA (Ta)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	1.05 nC @ 10 V
Input Capacitance (Ciss.	23 pF @ 30 V
Mfr	NXP USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Bulk
Package / Case	SC-75, SOT-416
Power Dissipation (Max)	530mW (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	920mOhm @ 300mA, 10V
Series	TrenchMOS?
Supplier Device Package	SC-75
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3V @ 250?A

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