Attributes

Key Value
Base Product NumberMTB50
CategoryDiscrete Semiconductor .
Current - Continuous Dr.50A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .100 nC @ 5 V
Input Capacitance (Ciss.4900 pF @ 25 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusObsolete
Power Dissipation (Max)2.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 25A, 5V
Series-
Supplier Device PackageD?PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?15V
Vgs(th) (Max) @ Id2V @ 250?A
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