Attributes

Key Value
Base Product NumberNTMS4N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3.3A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .16 nC @ 4.5 V
Input Capacitance (Ciss.1200 pF @ 10 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm .
Part StatusObsolete
Power Dissipation (Max)770mW (Ta)
Rds On (Max) @ Id, Vgs40mOhm @ 4.2A, 4.5V
Series-
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?10V
Vgs(th) (Max) @ Id1.2V @ 250?A
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