Attributes

Key Value
Base Product NumberRQ5H030
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3A (Ta)
Drain to Source Voltage.45V
Drive Voltage (Max Rds .2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .6.2nC @ 4.5V
Input Capacitance (Ciss.510pF @ 10V
MfrRohm Semiconductor
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSC-96
Part StatusActive
Power Dissipation (Max)700mW (Ta)
Rds On (Max) @ Id, Vgs67mOhm @ 3A, 4.5V
Series-
Supplier Device PackageTSMT3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id1.5V @ 1mA
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