STMicroelectronics SCTWA60N120G2-4

mpnSCTWA60N120G2-4
brandname: STMicroelectronics
manufacturername: STMicroelectronics

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	60A (Tc)
Drain to Source Voltage.	1200 V
Drive Voltage (Max Rds .	18V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	94 nC @ 18 V
Input Capacitance (Ciss.	1969 pF @ 800 V
Mfr	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 200?C (TJ)
Package	Tube
Package / Case	TO-247-4
Power Dissipation (Max)	388W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 18V
Series	-
Supplier Device Package	TO-247-4
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	5V @ 1mA

As an Amazon Associate I earn from qualifying purchases.

1759693184.7148