UnitedSiC UJ4C075023K3S

mpnUJ4C075023K3S
brandname: UnitedSiC
manufacturername: UnitedSiC

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	66A (Tc)
Drain to Source Voltage.	750 V
Drive Voltage (Max Rds .	12V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	37.8 nC @ 15 V
Input Capacitance (Ciss.	1400 pF @ 400 V
Mfr	UnitedSiC
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C
Package	Tube
Package / Case	TO-247-3
Part Status	Active
Power Dissipation (Max)	306W (Tc)
Rds On (Max) @ Id, Vgs	29mOhm @ 40A, 12V
Series	-
Supplier Device Package	TO-247-3
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	6V @ 10mA

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