Attributes

Key Value
Base Product NumberIRFIBC40
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3.5A (Tc)
Drain to Source Voltage.600V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .60nC @ 10V
Input Capacitance (Ciss.1300pF @ 25V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack, Iso.
Part StatusActive
Power Dissipation (Max)40W (Tc)
Rds On (Max) @ Id, Vgs1.2Ohm @ 2.1A, 10V
Series-
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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