Attributes

Key Value
Base Product NumberIRFIBE20
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.4A (Tc)
Drain to Source Voltage.800 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .38 nC @ 10 V
Input Capacitance (Ciss.530 pF @ 25 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack, Iso.
Power Dissipation (Max)30W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs6.5Ohm @ 840mA, 10V
Series-
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759690594.1677