Infineon Technologies IPP600N25N3GXKSA1

mpnIPP600N25N3GXKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	10V
Drain to Source Voltage.	29 nC @ 10 V
Drive Voltage (Max Rds .	60mOhm @ 25A, 10V
FET Feature	136W (Tc)
FET Type	MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .	2350 pF @ 100 V
Mfr	Infineon Technologies
Mounting Type	PG-TO220-3-1
Operating Temperature	Through Hole
Package	Active
Package / Case	250 V
Part Status	N-Channel
Power Dissipation (Max)	-55?C ~ 175?C (TJ)
Rds On (Max) @ Id, Vgs	4V @ 90?A
Series	Tube
Supplier Device Package	TO-220-3
Technology	25A (Tc)
Vgs (Max)	-
Vgs(th) (Max) @ Id	?20V

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