Attributes

Key Value
Base Product NumberRCJ510
CategoryDiscrete Semiconductor .
Current - Continuous Dr.51A (Tc)
Drain to Source Voltage.250 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .120 nC @ 10 V
Input Capacitance (Ciss.7000 pF @ 25 V
MfrRohm Semiconductor
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)1.56W (Ta), 40W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs65mOhm @ 25.5A, 10V
Series-
Supplier Device PackageLPTS
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 1mA
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