Attributes

Key Value
Base Product NumberSTD1HN
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .15.5 nC @ 10 V
Input Capacitance (Ciss.228 pF @ 25 V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)50W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs5Ohm @ 1A, 10V
SeriesPowerMESH? II
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
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