Vishay Siliconix SIHB105N60EF-GE3

mpnSIHB105N60EF-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SIHB105
Category	Discrete Semiconductor .
Current - Continuous Dr.	29A (Tc)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	53 nC @ 10 V
Input Capacitance (Ciss.	1804 pF @ 100 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)	208W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	102mOhm @ 13A, 10V
Series	EF
Supplier Device Package	D?PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	5V @ 250?A

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