Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3A (Ta)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .15 nC @ 10 V
Input Capacitance (Ciss.975 pF @ 25 V
MfrCentral Semiconductor C.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-261-4, TO-261AA
Part StatusObsolete
Power Dissipation (Max)2W (Ta)
Rds On (Max) @ Id, Vgs150mOhm @ 2A, 10V
Series-
Supplier Device PackageSOT-223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20V
Vgs(th) (Max) @ Id4V @ 250?A
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