Attributes

Key Value
Channel TypeP
ConfigurationSingle
Dimensions10.51 x 4.65 x 15.49 mm
Drain Current-19 A
Drain to Source On Resi.0.2 Ohms
Drain to Source Voltage-100 V
Forward Transconductance6.2 S
Forward Voltage, Diode-5 V
Gate to Source Voltage?20 V
Height0.61" (15.49mm)
Input Capacitance1400 pF @ -25 V
Length0.413 in
Maximum Operating Tempe.+175 ?C
Minimum Operating Tempe.-55 ?C
Mounting TypeThrough Hole
Number of Elements per .1
Number of Pins3
Package TypeTO-220AB
PolarizationP-Channel
Power Dissipation150 W
Product HeaderHexfet? Power MOSFET
SeriesIRF Series
Temperature Operating R.-55 to +175 ?C
Total Gate Charge61 nC
Turn Off Delay Time34 ns
Turn On Delay Time16 ns
Typical Gate Charge @ V.Maximum of 61 nC @ -10 V
Voltage, Breakdown, Dra.-100 V
Width0 in
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