DIODES DMN313DLT-7

mpnDMN313DLT-7
brandname: Diodes Incorporated
manufacturername: Diodes Incorporated

DIODES DMN313DLT-7 Single N-Channel 30 V 3.2 Ohm 0.5 nC 0.36 W Silicon SMT Mosfet - SOT-523 - 3000 item(s)

DIODES DMN313DLT-7 Single N-Channel 30 V 3.2 Ohm 0.5 nC 0.36 W Silicon SMT Mosfet - SOT-523 - 3000 item(s)

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Brand: DIODES
PartNumber: DMN313DLT-7
Model: DMN313DLT-7
PackageQuantity: 1
Manufacturer: DIODES
Label: DIODES

Attributes

Key	Value
Base Product Number	DMN313
Case	SOT523
Category	Discrete Semiconductor .
Current - Continuous Dr.	270mA (Ta)
Drain current	300mA
Drain to Source Voltage.	30 V
Drain-source voltage	30V
Drive Voltage (Max Rds .	2.5V, 4.5V
FET Feature	-
FET Type	N-Channel
Gate charge	500pC
Gate Charge (Qg) (Max) .	0.5 nC @ 4.5 V
Gate-source voltage	?20V
Input Capacitance (Ciss.	36.3 pF @ 5 V
Kind of channel	enhanced
Kind of package	reel,
Manufacturer	Diodes Incorporated
Mfr	Diodes Incorporated
Mounting	SMD
Mounting Type	Surface Mount
On-state resistance	3.2?
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	SOT-523
Polarisation	unipolar
Power dissipation	520mW
Power Dissipation (Max)	280mW (Ta)
Product Status	Active
Pulsed drain current	1.2A
Rds On (Max) @ Id, Vgs	2Ohm @ 10mA, 4V
Series	-
Supplier Device Package	SOT-523
Technology	MOSFET (Metal Oxide)
Type of transistor	N-MOSFET
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	1.5V @ 250?A

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	Newark	09AH9093	0.027	3000	50		DIODES INC.		0.027 @ 3000
	Hotenda	H1819863	0.0506	1	50		Diodes Incorporated		0.0506 @ 50
	TME	DMN313DLT-7	0.0616	10	50		DIODES INCORPORATED		0.0616 @ 50
	Future Electronics	3047659	0.0918	3000	50		Diodes Incorporated		0.0918 @ 3000
	RS Delivers	827-0487P	0.2292	1	13200		DiodesZetex		0.2292 @ 50
	Digi-Key	4770659	0.3132	1	50	201	Diodes Incorporated		0.16596 @ 100

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