IXYS IXTX110N20L2

mpnIXTX110N20L2
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Current - Continuous Dr.	110A (Tc)
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	500 nC @ 10 V
Input Capacitance (Ciss.	23000 pF @ 25 V
Mfr	IXYS
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package / Case	TO-247-3
Part Status	Active
Power Dissipation (Max)	960W (Tc)
Rds On (Max) @ Id, Vgs	24mOhm @ 55A, 10V
Supplier Device Package	PLUS247?-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.5V @ 3mA

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