Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.15.7A (Ta), 128A (Tc)
Drain to Source Voltage.25 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .49.2 nC @ 4.5 V
Input Capacitance (Ciss.4600 pF @ 12 V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusObsolete
Power Dissipation (Max)1.43W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs3.6mOhm @ 30A, 10V
Series-
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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