Attributes

Key Value
Base Product NumberFCMT180
CategoryDiscrete Semiconductor .
Current - Continuous Dr.17A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .33 nC @ 10 V
Input Capacitance (Ciss.1350 pF @ 400 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case4-PowerTSFN
Part StatusActive
Power Dissipation (Max)139W (Tc)
Rds On (Max) @ Id, Vgs180mOhm @ 8.5A, 10V
SeriesSuperFET? III
Supplier Device PackagePower88
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 1.8mA
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