Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.25A (Ta)
Drain to Source Voltage.150 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .38 nC @ 10 V
Input Capacitance (Ciss.2400 pF @ 25 V
MfrRenesas Electronics Ame.
Mounting TypeSurface Mount
Operating Temperature150?C
PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Part StatusObsolete
Power Dissipation (Max)30W (Tc)
Rds On (Max) @ Id, Vgs48mOhm @ 12.5A, 10V
Series-
Supplier Device Package8-WPAK (3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 1mA
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