Vishay Siliconix IRF610PBF-BE3

mpnIRF610PBF-BE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	IRF610
Category	Discrete Semiconductor .
Current - Continuous Dr.	3.3A (Tc)
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	8.2 nC @ 10 V
Input Capacitance (Ciss.	140 pF @ 25 V
Mfr	Vishay Siliconix
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	36W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	1.5Ohm @ 2A, 10V
Series	-
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A

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